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AT88SC X8566L TSA5059A SRD820 2SC2839 R43391 0DC24 S4008DS2
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  Datasheet File OCR Text:
 TO-92 Plastic-Encapsulate Transistors
TO-92
8050S
FEATURES
TRANSISTOR (NPN)
Complimentary to 8550S Collector current: IC=0.5A MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 40 25 5 0.5 0.625 150 -55-150 Units V V V A W
1.EMITTER
2.COLLECTOR
3.BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat) VCE= 1V, IC= 500mA 50 0.6 1.2 150 V V MHz IC=500mA, IB=50mA IC=500mA, IB=50mA VCE= 6V, IC=20mA Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) Test conditions IE=0 IB=0 IC=0 IE=0 IB=0 MIN 40 25 5 0.1 0.1 0.1 85 400 TYP MAX UNIT V V V A A A
IC= 100A, IC= 0.1mA, IE= 100A, VCB= 40 V , VCE= 20 V , VEB= 5V, VCE= 1V,
IC=0 IC= 50mA
fT hFE(1)
B 85-160 C
f =30MHz
CLASSIFICATION OF
Rank Range
D 160-300
D3 300-400
120-200
Typical Characteristics
8050S


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